3430-SW

3430-SW is a dynamic test system for power semiconductors designed to quickly and accurately evaluate the dynamic characteristics of IGBTs and MOSFETs. It enables evaluation under conditions close to actual device operation, including switching time measurement, short-circuit withstand capability testing (I-Short), and reverse recovery characteristics (trr) evaluation.
High efficiency and high reliability are required for modern power semiconductors such as SiC MOSFETs and high-voltage IGBTs. The 3430-SW supports test conditions up to the 1500V and 1000A class, assisting in the development and quality evaluation of devices for EV inverters, industrial machinery, and renewable energy power conversion systems.

Feature

・Supports Switching Characteristics Evaluation
Measures turn-on time, turn-off time, rise time, fall time, Eon, Eoff, and more.
・Short-Circuit Withstand Capability (I-Short) Testing
Evaluates the short-circuit protection performance and durability of power devices.
・Reverse Recovery Characteristic Analysis via trr and Qrr Evaluation
Accurately measures reverse recovery characteristics, which are crucial for high-speed switching applications.
・Parallel Measurement with Up to 4 Stations
Achieves high-throughput evaluation through dedicated station configurations for each measurement item.
・Shorter Measurement Times via High-Speed Waveform Analysis
Significantly reduces evaluation times through proprietary waveform analysis technology.
・Optimal for SiC, IGBT, and MOSFET Evaluation
Supports the development, characteristic evaluation, and quality assurance processes of next-generation power semiconductors.